Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IPP80N06S407AKSA2
BESCHREIBUNG
MOSFET N-CH 60V 80A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 80A (Tc) 79W (Tc) Through Hole PG-TO220-3-1
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500

Technische Daten

Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
7.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 40µA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
79W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-1
Package / Case
TO-220-3
Base Product Number
IPP80N06

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

2156-IPP80N06S407AKSA2
INFINFIPP80N06S407AKSA2
SP001028666

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPP80N06S407AKSA2

Dokumente und Medien

Datasheets
1(IPx80N06S4-07)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Assembly/Origin
1(Mult Dev Wafer Fab 12/Feb/2019)
HTML Datasheet
1(IPx80N06S4-07)

Menge Preis

-

Stellvertreter

Teil Nr. : FDP060AN08A0
Hersteller. : onsemi
Verfügbare Menge. : 5,461
Einzelpreis. : $2.84000
Ersatztyp. : Similar
Teil Nr. : IXTP120N075T2
Hersteller. : IXYS
Verfügbare Menge. : 44
Einzelpreis. : $3.89000
Ersatztyp. : Similar
Teil Nr. : SUP90N06-6M0P-E3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 581
Einzelpreis. : $3.02000
Ersatztyp. : Similar