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ChinaDD1200S12H4HOSA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
DD1200S12H4HOSA1
BESCHREIBUNG
IGBT MODULE 1200V 1200A
DETAILIERTE BESCHREIBUNG
IGBT Module 2 Independent 1200 V 1200 A 1200000 W Chassis Mount Module
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
26 Weeks
EDACAD-MODELL
STANDARDPAKET
2
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
IHM-B
Package
Tray
Product Status
Active
IGBT Type
-
Configuration
2 Independent
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
1200 A
Power - Max
1200000 W
Vce(on) (Max) @ Vge, Ic
2.35V @ 15V, 1200A
Input
Standard
NTC Thermistor
No
Operating Temperature
-40°C ~ 150°C
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Base Product Number
DD1200
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
DD1200S12H4HOSA1-ND
SP001172132
448-DD1200S12H4HOSA1
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/Infineon Technologies DD1200S12H4HOSA1
Dokumente und Medien
Datasheets
1(DD1200S12H4)
Environmental Information
1(RoHS Certificate)
Menge Preis
QUANTITÄT: 10
Einzelpreis: $629.723
Verpackung: Tray
MinMultiplikator: 2
Verpackung: Tray
MinMultiplikator: 2
QUANTITÄT: 2
Einzelpreis: $654.32
Verpackung: Tray
MinMultiplikator: 2
Verpackung: Tray
MinMultiplikator: 2
Stellvertreter
-