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ChinaSI1905BDH-T1-E3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI1905BDH-T1-E3
BESCHREIBUNG
MOSFET 2P-CH 8V 0.63A SC70-6
DETAILIERTE BESCHREIBUNG
Mosfet Array 8V 630mA 357mW Surface Mount SC-70-6
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
8V
Current - Continuous Drain (Id) @ 25°C
630mA
Rds On (Max) @ Id, Vgs
542mOhm @ 580mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
62pF @ 4V
Power - Max
357mW
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
SC-70-6
Base Product Number
SI1905
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Vishay Siliconix SI1905BDH-T1-E3
Dokumente und Medien
Environmental Information
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HTML Datasheet
1(SI1905BDH)
Menge Preis
-
Stellvertreter
Teil Nr. : SI1965DH-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 2,875
Einzelpreis. : $0.49000
Ersatztyp. : Similar
Verfügbare Menge. : 2,875
Einzelpreis. : $0.49000
Ersatztyp. : Similar