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ChinaECH8619-TL-E
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
ECH8619-TL-E
BESCHREIBUNG
MOSFET N/P-CH 60V 3A/2A 8ECH
DETAILIERTE BESCHREIBUNG
Mosfet Array 60V 3A, 2A 1.5W Surface Mount 8-ECH
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
3A, 2A
Rds On (Max) @ Id, Vgs
93mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
12.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
560pF @ 20V
Power - Max
1.5W
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Supplier Device Package
8-ECH
Base Product Number
ECH8619
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
869-1156-1
ECH8619TLE
869-1156-6
869-1156-2
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/onsemi ECH8619-TL-E
Dokumente und Medien
Datasheets
1(ECH8619)
Environmental Information
()
Product Drawings
1(ECH8 Package - P, N, N/P, Dual-N & Dual-P Channel Top)
Menge Preis
-
Stellvertreter
Teil Nr. : QS8M31TR
Hersteller. : Rohm Semiconductor
Verfügbare Menge. : 5,430
Einzelpreis. : $0.80000
Ersatztyp. : Similar
Verfügbare Menge. : 5,430
Einzelpreis. : $0.80000
Ersatztyp. : Similar