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ChinaHN3C51F-BL(TE85L,F
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
HN3C51F-BL(TE85L,F
BESCHREIBUNG
TRANS 2NPN 120V 0.1A SM6
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor Array 2 NPN (Dual) 120V 100mA 100MHz 300mW Surface Mount SM6
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
2 NPN (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
120V
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
350 @ 2mA, 6V
Power - Max
300mW
Frequency - Transition
100MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SC-74, SOT-457
Supplier Device Package
SM6
Base Product Number
HN3C51
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
HN3C51F-BL(TE85LF)CT-ND
HN3C51F-BL(TE85L,F)
HN3C51F-BLTE85LF
HN3C51F-BL (TE85L,F
HN3C51F-BL(TE85LFCT
HN3C51FBL(TE85LFTR
HN3C51F-BL(TE85LF)TR-ND
HN3C51FBL(TE85LFTR-ND
HN3C51F-BL(TE85LF)CT
HN3C51F-BL(TE85LF)DKR
HN3C51F-BL(TE85LF)TR
HN3C51F-BL(TE85LFTR
HN3C51F-BL(TE85LF)DKR-ND
HN3C51F-BL(TE85LFDKR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/Toshiba Semiconductor and Storage HN3C51F-BL(TE85L,F
Dokumente und Medien
Datasheets
1(HN3C51F)
HTML Datasheet
1(HN3C51F)
Menge Preis
-
Stellvertreter
Teil Nr. : 2SC4117-BL,LF
Hersteller. : Toshiba Semiconductor and Storage
Verfügbare Menge. : 1,732
Einzelpreis. : $0.23000
Ersatztyp. : Similar
Verfügbare Menge. : 1,732
Einzelpreis. : $0.23000
Ersatztyp. : Similar