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TEILNUMMER DES HERSTELLERS
2SC2619FBTR-E
BESCHREIBUNG
SMALL SIGNAL BIPOLAR TRANSISTOR
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 30 V 100 mA 230MHz 150 mW Surface Mount 3-MPAK
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,803
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
30 V
Vce Saturation (Max) @ Ib, Ic
1.1V @ 1mA, 10mA
Current - Collector Cutoff (Max)
500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 2mA, 12V
Power - Max
150 mW
Frequency - Transition
230MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
3-MPAK
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
2156-2SC2619FBTR-E
RENRNS2SC2619FBTR-E
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SC2619FBTR-E
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 1803
Einzelpreis: $0.17
Verpackung: Bulk
MinMultiplikator: 1803
Verpackung: Bulk
MinMultiplikator: 1803
Stellvertreter
-