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ChinaSI5913DC-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI5913DC-T1-GE3
BESCHREIBUNG
MOSFET P-CH 20V 4A 1206-8
DETAILIERTE BESCHREIBUNG
P-Channel 20 V 4A (Tc) 1.7W (Ta), 3.1W (Tc) Surface Mount 1206-8 ChipFET™
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
LITTLE FOOT®
Package
Cut Tape (CT)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Rds On (Max) @ Id, Vgs
84mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
330 pF @ 10 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
1.7W (Ta), 3.1W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
1206-8 ChipFET™
Package / Case
8-SMD, Flat Lead
Base Product Number
SI5913
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SI5913DC-T1-GE3CT
SI5913DCT1GE3
SI5913DC-T1-GE3DKR
SI5913DC-T1-GE3TR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI5913DC-T1-GE3
Dokumente und Medien
Datasheets
1(SI5913DC)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 14/Mar/2018)
HTML Datasheet
1(SI5913DC)
Menge Preis
-
Stellvertreter
Teil Nr. : SI5441BDC-T1-E3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 0
Einzelpreis. : $1.13000
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $1.13000
Ersatztyp. : Similar
Teil Nr. : NTHD3101FT1G
Hersteller. : onsemi
Verfügbare Menge. : 3,000
Einzelpreis. : $0.52389
Ersatztyp. : Similar
Verfügbare Menge. : 3,000
Einzelpreis. : $0.52389
Ersatztyp. : Similar