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Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
ISL9N306AD3
BESCHREIBUNG
N-CHANNEL POWER MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 50A (Tc) 125W (Ta) Through Hole I-PAK
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
317
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
UltraFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3400 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
125W (Ta)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
FAIFSCISL9N306AD3
2156-ISL9N306AD3
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor ISL9N306AD3
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 317
Einzelpreis: $0.95
Verpackung: Bulk
MinMultiplikator: 317
Verpackung: Bulk
MinMultiplikator: 317
Stellvertreter
-