Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
BSR606NH6327XTSA1
BESCHREIBUNG
MOSFET N-CH 60V 2.3A SC59
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 2.3A (Ta) 500mW (Ta) Surface Mount PG-SC59-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000

Technische Daten

Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
60mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id
2.3V @ 15µA
Gate Charge (Qg) (Max) @ Vgs
5.6 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
657 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
PG-SC59-3
Package / Case
TO-236-3, SC-59, SOT-23-3

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095

Andere Namen

IFEINFBSR606NH6327XTSA1
BSR606NH6327XTSA1TR
SP000691160
BSR606NH6327XTSA1DKR
2156-BSR606NH6327XTSA1
BSR606NH6327XTSA1-ND
BSR606NH6327XTSA1CT

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSR606NH6327XTSA1

Dokumente und Medien

Datasheets
1(BSR606N)
Other Related Documents
1(Part Number Guide)
PCN Packaging
1(Mult Dev Packing Box Chg 18/Oct/2019)
HTML Datasheet
1(BSR606N)
Simulation Models
1(MOSFET OptiMOS™ 60V N-Channel Spice Model)

Menge Preis

-

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