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Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
JAN2N1016B
BESCHREIBUNG
TRANS NPN 100V 7.5A TO82
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 100 V 7.5 A 150 W TO-82
HERSTELLER
Microsemi Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Microsemi Corporation
Series
Military, MIL-PRF-19500/102
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
7.5 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
2.5V @ 1A, 5A
Current - Collector Cutoff (Max)
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 2A, 4V
Power - Max
150 W
Frequency - Transition
-
Operating Temperature
-65°C ~ 150°C (TJ)
Supplier Device Package
TO-82
Base Product Number
2N1016
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
1086-16070-ND
1086-16070-MIL
150-JAN2N1016B
1086-16070
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Microsemi Corporation JAN2N1016B
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Menge Preis
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