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ChinaNTGD4161PT1G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NTGD4161PT1G
BESCHREIBUNG
MOSFET 2P-CH 30V 1.5A 6TSOP
DETAILIERTE BESCHREIBUNG
Mosfet Array 30V 1.5A 600mW Surface Mount 6-TSOP
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
NTGD4161PT1G Models
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
1.5A
Rds On (Max) @ Id, Vgs
160mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
281pF @ 15V
Power - Max
600mW
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
6-TSOP
Base Product Number
NTGD41
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
ONSONSNTGD4161PT1G
2156-NTGD4161PT1G-ONTR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/onsemi NTGD4161PT1G
Dokumente und Medien
Datasheets
1(NTGD4161P)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 30/Sept/2011)
HTML Datasheet
1(NTGD4161P)
EDA Models
1(NTGD4161PT1G Models)
Menge Preis
-
Stellvertreter
-