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China2SJ360(F)
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TEILNUMMER DES HERSTELLERS
2SJ360(F)
BESCHREIBUNG
MOSFET P-CH 60V 1A PW-MINI
DETAILIERTE BESCHREIBUNG
P-Channel 60 V 1A (Ta) 500mW (Ta) Surface Mount PW-MINI
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
730mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
6.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
155 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PW-MINI
Package / Case
TO-243AA
Base Product Number
2SJ360
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage 2SJ360(F)
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