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China2SB817C
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SB817C
BESCHREIBUNG
PNP SILICON TRANSISTOR
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 140 V 12 A 10MHz 2.5 W Through Hole TO-3P-3
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
126
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
12 A
Voltage - Collector Emitter Breakdown (Max)
140 V
Vce Saturation (Max) @ Ib, Ic
2V @ 500mA, 5A
Current - Collector Cutoff (Max)
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1A, 5V
Power - Max
2.5 W
Frequency - Transition
10MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3P-3
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
ONSONS2SB817C
2156-2SB817C
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SB817C
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 126
Einzelpreis: $2.39
Verpackung: Bulk
MinMultiplikator: 126
Verpackung: Bulk
MinMultiplikator: 126
Stellvertreter
-