English
Spain
Rusia
Italy
China2N4250A
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2N4250A
BESCHREIBUNG
TRANS PNP 60V TO126
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 60 V 200 mW Through Hole TO-126
HERSTELLER
Central Semiconductor Corp
STANDARD LEADTIME
EDACAD-MODELL
2N4250A Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Central Semiconductor Corp
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
PNP
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
250mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 100µA, 5V
Power - Max
200 mW
Frequency - Transition
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Central Semiconductor Corp 2N4250A
Dokumente und Medien
Environmental Information
1(RoHS Cert)
PCN Obsolescence/ EOL
1(EOL 01/Feb/2017)
EDA Models
1(2N4250A Models)
Menge Preis
-
Stellvertreter
Teil Nr. : MJE210G
Hersteller. : onsemi
Verfügbare Menge. : 3,077
Einzelpreis. : $0.87000
Ersatztyp. : Similar
Verfügbare Menge. : 3,077
Einzelpreis. : $0.87000
Ersatztyp. : Similar