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ChinaBFP640E6327
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BFP640E6327
BESCHREIBUNG
RF BIPOLAR TRANSISTOR
DETAILIERTE BESCHREIBUNG
RF Transistor NPN 4.5V 50mA 40GHz 200mW Surface Mount PG-SOT343-4
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
866
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
4.5V
Frequency - Transition
40GHz
Noise Figure (dB Typ @ f)
0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Gain
24dB
Power - Max
200mW
DC Current Gain (hFE) (Min) @ Ic, Vce
110 @ 30mA, 3V
Current - Collector (Ic) (Max)
50mA
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SC-82A, SOT-343
Supplier Device Package
PG-SOT343-4
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
2156-BFP640E6327
INFINFBFP640E6327
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar RF Transistors/Infineon Technologies BFP640E6327
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 866
Einzelpreis: $0.35
Verpackung: Bulk
MinMultiplikator: 866
Verpackung: Bulk
MinMultiplikator: 866
Stellvertreter
-