Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
NVD5802NT4G
BESCHREIBUNG
MOSFET N-CH 40V 16.4A/101A DPAK
DETAILIERTE BESCHREIBUNG
N-Channel 40 V 16.4A (Ta), 101A (Tc) 2.5W (Ta), 93.75W (Tc) Surface Mount DPAK
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
NVD5802NT4G Models
STANDARDPAKET
2,500

Technische Daten

Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
16.4A (Ta), 101A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
4.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5300 pF @ 12 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 93.75W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
DPAK
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
NVD580

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

2832-NVD5802NT4GTR
2156-NVD5802NT4G
ONSONSNVD5802NT4G

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NVD5802NT4G

Dokumente und Medien

Datasheets
1(NTD,NVD5802N)
Environmental Information
()
PCN Obsolescence/ EOL
()
PCN Design/Specification
()
PCN Assembly/Origin
1(Wafer Fab Capacity 27/Jul/2020)
HTML Datasheet
1(NTD,NVD5802N)
EDA Models
1(NVD5802NT4G Models)

Menge Preis

-

Stellvertreter

Teil Nr. : FDD8453LZ
Hersteller. : onsemi
Verfügbare Menge. : 635
Einzelpreis. : $1.65000
Ersatztyp. : Similar
Teil Nr. : IPD90N04S405ATMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 9,335
Einzelpreis. : $1.26000
Ersatztyp. : Similar