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ChinaMVB50P03HDLT4G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
MVB50P03HDLT4G
BESCHREIBUNG
MOSFET P-CH 30V 50A D2PAK-3
DETAILIERTE BESCHREIBUNG
P-Channel 30 V 50A (Tc) 125W (Tc) Surface Mount D2PAK
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
25mOhm @ 25A, 5V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 5 V
Vgs (Max)
±15V
Input Capacitance (Ciss) (Max) @ Vds
4900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
MVB50
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi MVB50P03HDLT4G
Dokumente und Medien
Datasheets
1(MTB50P03HDL, MVB50P03HDLT4G)
Environmental Information
1(onsemi RoHS)
PCN Obsolescence/ EOL
1(1Q2018 Product EOL 31/Mar/2018)
PCN Assembly/Origin
1(Mold Compound 10/Nov/2021)
HTML Datasheet
1(MTB50P03HDL, MVB50P03HDLT4G)
Menge Preis
-
Stellvertreter
-