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TEILNUMMER DES HERSTELLERS
IRF5802
BESCHREIBUNG
MOSFET N-CH 150V 900MA MICRO6
DETAILIERTE BESCHREIBUNG
N-Channel 150 V 900mA (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 540mA, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.8 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
88 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2W (Ta)
Mounting Type
Surface Mount
Supplier Device Package
Micro6™(TSOP-6)
Package / Case
SOT-23-6 Thin, TSOT-23-6
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF5802
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Menge Preis
-
Stellvertreter
Teil Nr. : SI3442BDV-T1-E3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 27,097
Einzelpreis. : $0.57000
Ersatztyp. : Similar
Verfügbare Menge. : 27,097
Einzelpreis. : $0.57000
Ersatztyp. : Similar