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ChinaIPU13N03LA G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPU13N03LA G
BESCHREIBUNG
MOSFET N-CH 25V 30A TO251-3
DETAILIERTE BESCHREIBUNG
N-Channel 25 V 30A (Tc) 46W (Tc) Through Hole P-TO251-3-1
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
12.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs
8.3 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1043 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
46W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
P-TO251-3-1
Package / Case
-
Base Product Number
IPU13N
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SP000017538
IPU13N03LAIN
IPU13N03LA
IPU13N03LAIN-ND
IPU13N03LAGIN
IPU13N03LAGXTIN
IPU13N03LAGXTIN-ND
IPU13N03LAGIN-NDR
IPU13N03LAGX
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPU13N03LA G
Dokumente und Medien
Datasheets
1(IPx13N03LA G)
Other Related Documents
1(Part Number Guide)
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1(Data Processing Systems)
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