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ChinaSIHD2N80AE-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SIHD2N80AE-GE3
BESCHREIBUNG
MOSFET N-CH 800V 2.9A DPAK
DETAILIERTE BESCHREIBUNG
N-Channel 800 V 2.9A (Tc) 62.5W (Tc) Surface Mount TO-252AA
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
21 Weeks
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
E
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
2.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.9Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
10.5 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
62.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
SIHD2
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHD2N80AE-GE3
Dokumente und Medien
Datasheets
1(SIHD2N80AE Datasheet)
HTML Datasheet
1(SIHD2N80AE Datasheet)
Menge Preis
QUANTITÄT: 3000
Einzelpreis: $0.48528
Verpackung: Tube
MinMultiplikator: 3000
Verpackung: Tube
MinMultiplikator: 3000
Stellvertreter
-