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ChinaIRF7338TRPBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRF7338TRPBF
BESCHREIBUNG
MOSFET N/P-CH 12V 6.3A/3A 8SO
DETAILIERTE BESCHREIBUNG
Mosfet Array 12V 6.3A, 3A 2W Surface Mount 8-SO
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
4,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
12V
Current - Continuous Drain (Id) @ 25°C
6.3A, 3A
Rds On (Max) @ Id, Vgs
34mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
640pF @ 9V
Power - Max
2W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
Base Product Number
IRF733
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IRF7338TRPBF-ND
SP001555186
IRF7338TRPBFTR
IRF7338TRPBFDKR
IRF7338TRPBFCT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies IRF7338TRPBF
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