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ChinaDMG3415UFY4-7
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
DMG3415UFY4-7
BESCHREIBUNG
MOSFET P-CH 16V 2.5A DFN2015H4-3
DETAILIERTE BESCHREIBUNG
P-Channel 16 V 2.5A (Ta) 400mW (Ta) Surface Mount DFN2015H4-3
HERSTELLER
Diodes Incorporated
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Diodes Incorporated
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
16 V
Current - Continuous Drain (Id) @ 25°C
2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
39mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
281.9 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
400mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DFN2015H4-3
Package / Case
3-XFDFN
Base Product Number
DMG3415
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
DMG3415UFY47
DMG3415UFY4-7DIDKR
DMG3415UFY4-7DICT
DMG3415UFY4-7DITR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Diodes Incorporated DMG3415UFY4-7
Dokumente und Medien
Datasheets
1(DMG3415UFY4)
Environmental Information
1(Diodes Environmental Compliance Cert)
PCN Obsolescence/ EOL
1(Mult Dev EOL 22/Jan/2018)
PCN Design/Specification
1(Bond Wire 11/Nov/2011)
Menge Preis
-
Stellvertreter
Teil Nr. : DMP2045UFY4-7
Hersteller. : Diodes Incorporated
Verfügbare Menge. : 2,929
Einzelpreis. : $0.36000
Ersatztyp. : Similar
Verfügbare Menge. : 2,929
Einzelpreis. : $0.36000
Ersatztyp. : Similar