Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
SCT3160KLGC11
BESCHREIBUNG
SICFET N-CH 1200V 17A TO247N
DETAILIERTE BESCHREIBUNG
N-Channel 1200 V 17A (Tc) 103W (Tc) Through Hole TO-247N
HERSTELLER
Rohm Semiconductor
STANDARD LEADTIME
35 Weeks
EDACAD-MODELL
SCT3160KLGC11 Models
STANDARDPAKET

Technische Daten

Mfr
Rohm Semiconductor
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
208mOhm @ 5A, 18V
Vgs(th) (Max) @ Id
5.6V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 18 V
Vgs (Max)
+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds
398 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
103W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247N
Package / Case
TO-247-3
Base Product Number
SCT3160

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

-

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Rohm Semiconductor SCT3160KLGC11

Dokumente und Medien

Datasheets
()
Other Related Documents
()
Product Training Modules
()
Video File
()
Environmental Information
()
Design Resources
1(TO-247N Inner Structure)
Featured Product
()
HTML Datasheet
1(TO-247N Taping Spec)
EDA Models
1(SCT3160KLGC11 Models)
Simulation Models
1(SCT3160KL Spice Model)
Reliability Documents
1(MOS-3GTHD Reliability Test)

Menge Preis

QUANTITÄT: 1020
Einzelpreis: $5.72533
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 510
Einzelpreis: $6.36149
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 120
Einzelpreis: $7.20967
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 30
Einzelpreis: $8.058
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $10.09
Verpackung: Tube
MinMultiplikator: 1

Stellvertreter

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