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China2SC5831
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SC5831
BESCHREIBUNG
POWER BIPOLAR TRANSISTOR NPN
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN - Darlington 55 V 2 A 180MHz 1.5 W Through Hole TO-126ML
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,432
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
55 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 4mA, 1A
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 1A, 5V
Power - Max
1.5 W
Frequency - Transition
180MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126ML
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0075
Andere Namen
2156-2SC5831
ONSONS2SC5831
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SC5831
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 1432
Einzelpreis: $0.25
Verpackung: Bulk
MinMultiplikator: 1432
Verpackung: Bulk
MinMultiplikator: 1432
Stellvertreter
-