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ChinaNTHS5443T1G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NTHS5443T1G
BESCHREIBUNG
MOSFET P-CH 20V 3.6A CHIPFET
DETAILIERTE BESCHREIBUNG
P-Channel 20 V 3.6A (Ta) 1.3W (Ta) Surface Mount ChipFET™
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
65mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id
600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 4.5 V
Vgs (Max)
±12V
FET Feature
-
Power Dissipation (Max)
1.3W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
ChipFET™
Package / Case
8-SMD, Flat Lead
Base Product Number
NTHS5443
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
NTHS5443T1GOSCT
2156-NTHS5443T1G-OS
NTHS5443T1GOSCT-ND
ONSONSNTHS5443T1G
NTHS5443T1GOSTR-ND
488-NTHS5443T1GTR
NTHS5443T1GOSTR
2832-NTHS5443T1G
NTHS5443T1GOS-ND
488-NTHS5443T1GCT
488-NTHS5443T1GDKR
=NTHS5443T1GOSCT-ND
NTHS5443T1GOS
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTHS5443T1G
Dokumente und Medien
Datasheets
1(NTHS5443)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 08/Jul/2021)
PCN Packaging
1(Covering Tape/Material Chg 20/May/2016)
HTML Datasheet
1(NTHS5443)
Menge Preis
-
Stellvertreter
Teil Nr. : SI5443DC-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 0
Einzelpreis. : $0.00000
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $0.00000
Ersatztyp. : Similar