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ChinaFF6MR12KM1PHOSA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FF6MR12KM1PHOSA1
BESCHREIBUNG
SIC 2N-CH 1200V 250A AG-62MM
DETAILIERTE BESCHREIBUNG
Mosfet Array 1200V (1.2kV) 250A (Tc) Chassis Mount AG-62MM
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
FF6MR12KM1PHOSA1 Models
STANDARDPAKET
8
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolSiC™
Package
Tray
Product Status
Obsolete
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
250A (Tc)
Rds On (Max) @ Id, Vgs
5.81mOhm @ 250A, 15V
Vgs(th) (Max) @ Id
5.15V @ 80mA
Gate Charge (Qg) (Max) @ Vgs
496nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
14700pF @ 800V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
AG-62MM
Base Product Number
FF6MR12
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
448-FF6MR12KM1PHOSA1
SP002485310
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies FF6MR12KM1PHOSA1
Dokumente und Medien
Datasheets
1(FF6MR12KM1P)
EDA Models
1(FF6MR12KM1PHOSA1 Models)
Menge Preis
-
Stellvertreter
Teil Nr. : FF4MR12KM1HP
Hersteller. : Infineon Technologies
Verfügbare Menge. : 0
Einzelpreis. : $0.00000
Ersatztyp. : MFR Recommended
Verfügbare Menge. : 0
Einzelpreis. : $0.00000
Ersatztyp. : MFR Recommended