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ChinaBUZ30AH3045AATMA1
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TEILNUMMER DES HERSTELLERS
BUZ30AH3045AATMA1
BESCHREIBUNG
MOSFET N-CH 200V 21A D2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 21A (Tc) 125W (Tc) Surface Mount PG-TO263-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
130mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
BUZ30
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
BUZ30AL3045AINTR-ND
BUZ30AH3045AATMA1CT
BUZ30AL3045AINDKR-ND
BUZ30AH3045AINCT-ND
BUZ30AL3045AINCT-ND
BUZ30A H3045A
BUZ30AH3045AINTR-ND
INFINFBUZ30AH3045AATMA1
BUZ30AL3045AINTR
BUZ30AH3045AINTR
2156-BUZ30AH3045AATMA1
BUZ30AH3045AATMA1DKR
BUZ30AH3045AINDKR-ND
BUZ30A L3045A
BUZ30AH3045AATMA1TR
BUZ30AL3045AINCT
SP000736082
BUZ30AH3045AINCT
SP000102176
BUZ30A L3045A-ND
BUZ30AL3045AXT
BUZ30AL3045AINDKR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BUZ30AH3045AATMA1
Dokumente und Medien
Datasheets
1(BUZ30A H3045A)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(BUZ30A H3045A)
Menge Preis
-
Stellvertreter
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