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ChinaIRFD9113
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFD9113
BESCHREIBUNG
-0.6A, -80V, 1.6 OHM, P-CHANNEL
DETAILIERTE BESCHREIBUNG
P-Channel 60 V 600mA (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
HERSTELLER
Harris Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
485
Lagerbestände
Technische Daten
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
600mA (Ta)
Rds On (Max) @ Id, Vgs
1.6Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds
250 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Through Hole
Supplier Device Package
4-DIP, Hexdip, HVMDIP
Package / Case
4-DIP (0.300", 7.62mm)
Base Product Number
IRFD9113
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
HARHARIRFD9113
2156-IRFD9113
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation IRFD9113
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 485
Einzelpreis: $0.62
Verpackung: Bulk
MinMultiplikator: 485
Verpackung: Bulk
MinMultiplikator: 485
Stellvertreter
-