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ChinaTSM2N100CP ROG
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
TSM2N100CP ROG
BESCHREIBUNG
MOSFET N-CH 1000V 1.85A TO252
DETAILIERTE BESCHREIBUNG
N-Channel 1000 V 1.85A (Tc) 77W (Tc) Surface Mount TO-252 (DPAK)
HERSTELLER
Taiwan Semiconductor Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
Taiwan Semiconductor Corporation
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
1.85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
8.5Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
625 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
77W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252 (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
TSM2N100
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
TSM2N100CP ROGDKR-ND
TSM2N100CPROGDKR
TSM2N100CP ROGTR-ND
TSM2N100CP ROGCT-ND
TSM2N100CP ROGDKR
TSM2N100CP ROGCT
TSM2N100CPROGCT
TSM2N100CP ROGTR
TSM2N100CPROGTR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Taiwan Semiconductor Corporation TSM2N100CP ROG
Dokumente und Medien
Datasheets
1(TSM2N100CP)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev 17/Sep/2021)
HTML Datasheet
1(TSM2N100CP)
Menge Preis
-
Stellvertreter
Teil Nr. : IXTY1R6N100D2
Hersteller. : IXYS
Verfügbare Menge. : 0
Einzelpreis. : $3.54000
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $3.54000
Ersatztyp. : Similar