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ChinaFDMS4435BZ
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TEILNUMMER DES HERSTELLERS
FDMS4435BZ
BESCHREIBUNG
POWER FIELD-EFFECT TRANSISTOR, 9
DETAILIERTE BESCHREIBUNG
P-Channel 30 V 9A (Ta), 18A (Tc) 2.5W (Ta), 39W (Tc) Surface Mount 8-PQFN (5x6)
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
532
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
9A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
20mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
47 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
2050 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 39W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-PQFN (5x6)
Package / Case
8-PowerTDFN
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
ONSONSFDMS4435BZ
2156-FDMS4435BZ
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDMS4435BZ
Dokumente und Medien
Datasheets
1(FDMS4435BZ Datasheet)
Menge Preis
QUANTITÄT: 532
Einzelpreis: $0.56
Verpackung: Bulk
MinMultiplikator: 532
Verpackung: Bulk
MinMultiplikator: 532
Stellvertreter
-