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ChinaSIA950DJ-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SIA950DJ-T1-GE3
BESCHREIBUNG
MOSFET 2N-CH 190V 0.95A SC70-6
DETAILIERTE BESCHREIBUNG
Mosfet Array 190V 950mA 7W Surface Mount PowerPAK® SC-70-6 Dual
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
LITTLE FOOT®
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
190V
Current - Continuous Drain (Id) @ 25°C
950mA
Rds On (Max) @ Id, Vgs
3.8Ohm @ 360mA, 4.5V
Vgs(th) (Max) @ Id
1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
90pF @ 100V
Power - Max
7W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® SC-70-6 Dual
Supplier Device Package
PowerPAK® SC-70-6 Dual
Base Product Number
SIA950
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SIA950DJ-T1-GE3TR
SIA950DJ-T1-GE3DKR
SIA950DJT1GE3
SIA950DJ-T1-GE3CT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Vishay Siliconix SIA950DJ-T1-GE3
Dokumente und Medien
Datasheets
1(SIA950DJ)
PCN Obsolescence/ EOL
1(PCN- SIL-0582013 05/Dec/2013)
HTML Datasheet
1(SIA950DJ)
Menge Preis
-
Stellvertreter
Teil Nr. : SIB452DK-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 50,725
Einzelpreis. : $0.76000
Ersatztyp. : Similar
Verfügbare Menge. : 50,725
Einzelpreis. : $0.76000
Ersatztyp. : Similar