Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IPP086N10N3GHKSA1
BESCHREIBUNG
MOSFET N-CH 100V 80A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 80A (Tc) 125W (Tc) Through Hole PG-TO220-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500

Technische Daten

Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
8.6mOhm @ 73A, 10V
Vgs(th) (Max) @ Id
3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3980 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3
Base Product Number
IPP086N

Umweltverträgliche Exportklassifikationen

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

-

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPP086N10N3GHKSA1

Dokumente und Medien

Datasheets
1(IPx086N10N3, IPB083N10N3, IPD082N10N3 G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPx086N10N3, IPB083N10N3, IPD082N10N3 G)

Menge Preis

-

Stellvertreter

Teil Nr. : IPP086N10N3GXKSA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 0
Einzelpreis. : $1.85000
Ersatztyp. : Direct
Teil Nr. : HUF75545P3
Hersteller. : onsemi
Verfügbare Menge. : 490
Einzelpreis. : $2.95000
Ersatztyp. : Similar
Teil Nr. : PSMN8R7-80PS,127
Hersteller. : Nexperia USA Inc.
Verfügbare Menge. : 3,976
Einzelpreis. : $2.20000
Ersatztyp. : Similar