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ChinaSIHP6N65E-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SIHP6N65E-GE3
BESCHREIBUNG
MOSFET N-CH 650V 7A TO220AB
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 7A (Tc) 78W (Tc) Through Hole TO-220AB
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
28 Weeks
EDACAD-MODELL
SIHP6N65E-GE3 Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
820 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
78W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
SIHP6
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHP6N65E-GE3
Dokumente und Medien
Datasheets
1(SIHP6N65E)
PCN Assembly/Origin
1(Mult Dev Material Chg 30/Aug/2019)
HTML Datasheet
1(SIHP6N65E)
EDA Models
1(SIHP6N65E-GE3 Models)
Menge Preis
QUANTITÄT: 1000
Einzelpreis: $0.9898
Verpackung: Tube
MinMultiplikator: 1000
Verpackung: Tube
MinMultiplikator: 1000
Stellvertreter
Teil Nr. : SPA11N80C3XKSA2
Hersteller. : Infineon Technologies
Verfügbare Menge. : 201
Einzelpreis. : $2.87000
Ersatztyp. : Similar
Verfügbare Menge. : 201
Einzelpreis. : $2.87000
Ersatztyp. : Similar