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ChinaFDU3580
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TEILNUMMER DES HERSTELLERS
FDU3580
BESCHREIBUNG
MOSFET N-CH 80V 7.7A IPAK
DETAILIERTE BESCHREIBUNG
N-Channel 80 V 7.7A (Ta) 3.8W (Ta), 42W (Tc) Through Hole IPAK
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
346
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
7.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
29mOhm @ 7.7A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
79 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1760 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 42W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
FAIFSCFDU3580
2156-FDU3580-FS
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDU3580
Dokumente und Medien
Datasheets
1(FDD3580)
Menge Preis
QUANTITÄT: 346
Einzelpreis: $0.87
Verpackung: Tube
MinMultiplikator: 346
Verpackung: Tube
MinMultiplikator: 346
Stellvertreter
-