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TEILNUMMER DES HERSTELLERS
2N5551
BESCHREIBUNG
BJT TO92 160V NPN 0.625W 150C
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 160 V 200 mA 300MHz 625 mW Through Hole TO-92
HERSTELLER
Diodes Incorporated
STANDARD LEADTIME
EDACAD-MODELL
2N5551 Models
STANDARDPAKET
2,000
Lagerbestände
Technische Daten
Mfr
Diodes Incorporated
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
200 mA
Voltage - Collector Emitter Breakdown (Max)
160 V
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Power - Max
625 mW
Frequency - Transition
300MHz
Operating Temperature
-
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-92
Base Product Number
2N5551
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
2N5551DICT
2N5551DITB
2N5551CT-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Diodes Incorporated 2N5551
Dokumente und Medien
Environmental Information
1(Diodes Environmental Compliance Cert)
EDA Models
1(2N5551 Models)
Menge Preis
-
Stellvertreter
-