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ChinaPH3120L,115
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PH3120L,115
BESCHREIBUNG
MOSFET N-CH 20V 100A LFPAK56
DETAILIERTE BESCHREIBUNG
N-Channel 20 V 100A (Tc) 62.5W (Tc) Surface Mount LFPAK56, Power-SO8
HERSTELLER
Nexperia USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,500
Lagerbestände
Technische Daten
Mfr
Nexperia USA Inc.
Series
TrenchMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.65mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
48.5 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4457 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
62.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
LFPAK56, Power-SO8
Package / Case
SC-100, SOT-669
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
568-2178-6
568-2178-1
568-2178-2
1727-3052-1
1727-3052-2
934057822115
1727-3052-6
568-2178-2-ND
NEXNEXPH3120L,115
PH3120L T/R
568-2178-6-ND
568-2178-1-ND
2156-PH3120L115
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Nexperia USA Inc. PH3120L,115
Dokumente und Medien
Datasheets
1(PH3120L)
PCN Obsolescence/ EOL
1(2017 Year-End EOL 8/Jan/2018)
PCN Packaging
()
HTML Datasheet
1(PH3120L)
Menge Preis
-
Stellvertreter
Teil Nr. : HAT2160H-EL-E
Hersteller. : Renesas Electronics Corporation
Verfügbare Menge. : 0
Einzelpreis. : $0.00000
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $0.00000
Ersatztyp. : Similar