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China2SD863F-AE
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TEILNUMMER DES HERSTELLERS
2SD863F-AE
BESCHREIBUNG
BIP NPN 1A 50V
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 50 V 1 A 150MHz 900 mW Through Hole 3-MP
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,664
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 50mA, 2V
Power - Max
900 mW
Frequency - Transition
150MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Supplier Device Package
3-MP
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
ONSONS2SD863F-AE
2156-2SD863F-AE
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SD863F-AE
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 1664
Einzelpreis: $0.18
Verpackung: Bulk
MinMultiplikator: 1664
Verpackung: Bulk
MinMultiplikator: 1664
Stellvertreter
-