Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IRF7478TRPBF-1
BESCHREIBUNG
MOSFET N-CH 60V 7A 8SO
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 7A (Ta) 2.5W (Ta) Surface Mount 8-SO
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
4,000

Technische Daten

Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
26mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1740 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

-

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF7478TRPBF-1

Dokumente und Medien

Datasheets
1(IRF7478PbF-1)
HTML Datasheet
1(IRF7478PbF-1)

Menge Preis

-

Stellvertreter

Teil Nr. : STS8N6LF6AG
Hersteller. : STMicroelectronics
Verfügbare Menge. : 0
Einzelpreis. : $1.15000
Ersatztyp. : Similar