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ChinaSISH110DN-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SISH110DN-T1-GE3
BESCHREIBUNG
MOSFET N-CH 20V 13.5A PPAK
DETAILIERTE BESCHREIBUNG
N-Channel 20 V 13.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
18 Weeks
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET® Gen II
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
13.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5.3mOhm @ 21.1A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 4.5 V
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
1.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8SH
Package / Case
PowerPAK® 1212-8SH
Base Product Number
SISH110
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SISH110DN-T1-GE3TR
SISH110DN-T1-GE3CT
SISH110DN-T1-GE3DKR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SISH110DN-T1-GE3
Dokumente und Medien
Datasheets
1(SISH110DN)
PCN Assembly/Origin
1(Manufacturing Capacity Expansion 27/Jul/2023)
HTML Datasheet
1(SISH110DN)
Menge Preis
QUANTITÄT: 9000
Einzelpreis: $0.56358
Verpackung: Tape & Reel (TR)
MinMultiplikator: 6000
Verpackung: Tape & Reel (TR)
MinMultiplikator: 6000
QUANTITÄT: 6000
Einzelpreis: $0.59085
Verpackung: Tape & Reel (TR)
MinMultiplikator: 6000
Verpackung: Tape & Reel (TR)
MinMultiplikator: 6000
Stellvertreter
-