Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IPD031N03LGBTMA1
BESCHREIBUNG
MOSFET N-CH 30V 90A TO252-3
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 90A (Tc) 94W (Tc) Surface Mount PG-TO252-3-11
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500

Technische Daten

Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5300 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
94W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-11
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD031

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

-

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD031N03LGBTMA1

Dokumente und Medien

Datasheets
1(IPD031N03L G, IPS031N03L G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPD031N03L G, IPS031N03L G)

Menge Preis

QUANTITÄT: 12500
Einzelpreis: $0.45174
Verpackung: Tape & Reel (TR)
MinMultiplikator: 2500
QUANTITÄT: 5000
Einzelpreis: $0.4736
Verpackung: Tape & Reel (TR)
MinMultiplikator: 2500
QUANTITÄT: 2500
Einzelpreis: $0.49728
Verpackung: Tape & Reel (TR)
MinMultiplikator: 2500

Stellvertreter

Teil Nr. : IPD031N03LGATMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 5,031
Einzelpreis. : $0.92000
Ersatztyp. : Parametric Equivalent