Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
SIA467EDJ-T1-GE3
BESCHREIBUNG
MOSFET P-CH 12V 31A PPAK SC70-6
DETAILIERTE BESCHREIBUNG
P-Channel 12 V 31A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000

Technische Daten

Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
13mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 8 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
2520 pF @ 6 V
FET Feature
-
Power Dissipation (Max)
3.5W (Ta), 19W (Tc)
Operating Temperature
-50°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SC-70-6 Single
Package / Case
PowerPAK® SC-70-6
Base Product Number
SIA467

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

SIA467EDJ-T1-GE3CT
SIA467EDJ-T1-GE3DKR
SIA467EDJ-T1-GE3TR

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIA467EDJ-T1-GE3

Dokumente und Medien

Datasheets
1(SIA467EDJ)
Featured Product
1(12 V, -20 V, and -30 V Gen III P-Channel MOSFETs)
PCN Obsolescence/ EOL
1(Mult Mosfet EOL 30/Aug/2018)
PCN Assembly/Origin
1(Multiple Devices 11/Dec/2015)
HTML Datasheet
1(SIA467EDJ)

Menge Preis

-

Stellvertreter

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Hersteller. : Vishay Siliconix
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