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ChinaSIHU3N50DA-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SIHU3N50DA-GE3
BESCHREIBUNG
MOSFET N-CHANNEL 500V 3A IPAK
DETAILIERTE BESCHREIBUNG
N-Channel 500 V 3A (Tc) 69W (Tc) Through Hole IPAK (TO-251)
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
15 Weeks
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.2Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
177 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
69W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK (TO-251)
Package / Case
TO-251-3 Long Leads, IPak, TO-251AB
Base Product Number
SIHU3
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHU3N50DA-GE3
Dokumente und Medien
Datasheets
1(SIHU3N50DA)
HTML Datasheet
1(SIHU3N50DA)
Menge Preis
QUANTITÄT: 3000
Einzelpreis: $0.33391
Verpackung: Tube
MinMultiplikator: 3000
Verpackung: Tube
MinMultiplikator: 3000
Stellvertreter
-