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ChinaBSP317PL6327HTSA1
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TEILNUMMER DES HERSTELLERS
BSP317PL6327HTSA1
BESCHREIBUNG
MOSFET P-CH 250V 430MA SOT223-4
DETAILIERTE BESCHREIBUNG
P-Channel 250 V 430mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4-21
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
430mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4Ohm @ 430mA, 10V
Vgs(th) (Max) @ Id
2V @ 370µA
Gate Charge (Qg) (Max) @ Vgs
15.1 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
262 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT223-4-21
Package / Case
TO-261-4, TO-261AA
Base Product Number
BSP317
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-BSP317PL6327HTSA1
BSP317PL6327HTSA1TR
BSP317PL6327INCT
BSP317PL6327HTSA1DKR
BSP317P L6327-ND
BSP317PL6327HTSA1CT
BSP317P L6327
2156-BSP317PL6327HTSA1-ITTR-ND
BSP317PL6327INDKR
BSP317PL6327INTR
BSP317PL6327XT
SP000089220
BSP317PL6327
BSP317PL6327INDKR-ND
BSP317PL6327INCT-ND
BSP317PL6327INTR-ND
IFEINFBSP317PL6327HTSA1
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSP317PL6327HTSA1
Dokumente und Medien
Datasheets
1(BSP317P)
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1(Part Number Guide)
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HTML Datasheet
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Menge Preis
-
Stellvertreter
Teil Nr. : BSP317PH6327XTSA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 8,947
Einzelpreis. : $0.92000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 8,947
Einzelpreis. : $0.92000
Ersatztyp. : Parametric Equivalent