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TEILNUMMER DES HERSTELLERS
SPS02N60C3BKMA1
BESCHREIBUNG
LOW POWER_LEGACY
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 1.8A (Tc) 25W (Tc) Through Hole PG-TO251-3-11
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id
3.9V @ 80µA
Gate Charge (Qg) (Max) @ Vgs
12.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3-11
Package / Case
TO-251-3 Stub Leads, IPAK
Base Product Number
SPS02N
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SP000307410
INFINFSPS02N60C3BKMA1
2156-SPS02N60C3BKMA1-IT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPS02N60C3BKMA1
Dokumente und Medien
Datasheets
1(SPS02N60C3)
Other Related Documents
1(Part Number Guide)
HTML Datasheet
1(SPS02N60C3)
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