Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IXFX250N10P
BESCHREIBUNG
MOSFET N-CH 100V 250A PLUS247-3
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 250A (Tc) 1250W (Tc) Through Hole PLUS247™-3
HERSTELLER
IXYS
STANDARD LEADTIME
43 Weeks
EDACAD-MODELL
STANDARDPAKET

Technische Daten

Mfr
IXYS
Series
HiPerFET™, Polar
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
250A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
6.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
205 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
16000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1250W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PLUS247™-3
Package / Case
TO-247-3 Variant
Base Product Number
IXFX250

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65

Andere Namen

-

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFX250N10P

Dokumente und Medien

Datasheets
1(IXF(K,X)250N10P)
Environmental Information
1(Ixys IC REACH)

Menge Preis

QUANTITÄT: 300
Einzelpreis: $16.94777
Verpackung: Tube
MinMultiplikator: 300

Stellvertreter

Teil Nr. : IRFP4310ZPBF
Hersteller. : Infineon Technologies
Verfügbare Menge. : 422
Einzelpreis. : $4.63000
Ersatztyp. : Similar