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ChinaIPD50R399CPATMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPD50R399CPATMA1
BESCHREIBUNG
LOW POWER_LEGACY
DETAILIERTE BESCHREIBUNG
N-Channel 500 V 9A (Tc) 83W (Tc) Surface Mount PG-TO252-3-313
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
20 Weeks
EDACAD-MODELL
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolMOS™ CP
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
399mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id
3.5V @ 330µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
890 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-313
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD50R
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
448-IPD50R399CPATMA1TR
2156-IPD50R399CPATMA1TR
SP001117700
IPD50R399CPATMA1-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD50R399CPATMA1
Dokumente und Medien
Datasheets
1(IPD50R399CP)
Other Related Documents
1(Part Number Guide)
HTML Datasheet
1(IPD50R399CP)
Simulation Models
1(CoolMOS™ Power MOSFET 500V C3 Spice Model)
Menge Preis
QUANTITÄT: 5000
Einzelpreis: $0.86294
Verpackung: Tape & Reel (TR)
MinMultiplikator: 2500
Verpackung: Tape & Reel (TR)
MinMultiplikator: 2500
QUANTITÄT: 2500
Einzelpreis: $0.89665
Verpackung: Tape & Reel (TR)
MinMultiplikator: 2500
Verpackung: Tape & Reel (TR)
MinMultiplikator: 2500
Stellvertreter
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