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ChinaKA4A3Q-T1-A
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TEILNUMMER DES HERSTELLERS
KA4A3Q-T1-A
BESCHREIBUNG
0.1A, NPN
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 200 mW Surface Mount SC-75
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
4,058
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
1 kOhms
Resistor - Emitter Base (R2)
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic
200mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Power - Max
200 mW
Grade
-
Qualification
-
Mounting Type
Surface Mount
Package / Case
SC-75, SOT-416
Supplier Device Package
SC-75
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
RENRNSKA4A3Q-T1-A
2156-KA4A3Q-T1-A
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Renesas Electronics Corporation KA4A3Q-T1-A
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 4058
Einzelpreis: $0.07
Verpackung: Bulk
MinMultiplikator: 4058
Verpackung: Bulk
MinMultiplikator: 4058
Stellvertreter
-