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ChinaSI4104DY-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI4104DY-T1-GE3
BESCHREIBUNG
MOSFET N-CH 100V 4.6A 8SO
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 4.6A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
SI4104DY-T1-GE3 Models
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
105mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
446 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
SI4104
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SI4104DY-T1-GE3TR
SI4104DYT1GE3
SI4104DY-T1-GE3CT
SI4104DY-T1-GE3DKR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI4104DY-T1-GE3
Dokumente und Medien
PCN Obsolescence/ EOL
1(PCN- SIL-0582013 05/Dec/2013)
HTML Datasheet
1(SI4104DY)
EDA Models
1(SI4104DY-T1-GE3 Models)
Menge Preis
-
Stellvertreter
Teil Nr. : SI4100DY-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 4,795
Einzelpreis. : $1.27000
Ersatztyp. : Similar
Verfügbare Menge. : 4,795
Einzelpreis. : $1.27000
Ersatztyp. : Similar
Teil Nr. : FDS86106
Hersteller. : onsemi
Verfügbare Menge. : 4,904
Einzelpreis. : $1.28000
Ersatztyp. : Similar
Verfügbare Menge. : 4,904
Einzelpreis. : $1.28000
Ersatztyp. : Similar