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ChinaIRL2203NSTRRPBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRL2203NSTRRPBF
BESCHREIBUNG
MOSFET N-CH 30V 116A D2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 116A (Tc) 3.8W (Ta), 180W (Tc) Surface Mount D2PAK
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
800
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
116A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 4.5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
3290 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 180W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRL2203NSTRRPBF
Dokumente und Medien
Datasheets
1(IRL2203NS(NL))
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Design Resources
1(IRL2203NS Saber Model)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRL2203NS(NL))
Menge Preis
-
Stellvertreter
Teil Nr. : PSMN017-30BL,118
Hersteller. : Nexperia USA Inc.
Verfügbare Menge. : 1,868
Einzelpreis. : $89.93000
Ersatztyp. : Similar
Verfügbare Menge. : 1,868
Einzelpreis. : $89.93000
Ersatztyp. : Similar
Teil Nr. : PSMN4R3-30BL,118
Hersteller. : Nexperia USA Inc.
Verfügbare Menge. : 10,745
Einzelpreis. : $130.73000
Ersatztyp. : Similar
Verfügbare Menge. : 10,745
Einzelpreis. : $130.73000
Ersatztyp. : Similar