Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
SIHG73N60E-GE3
BESCHREIBUNG
MOSFET N-CH 600V 73A TO247AC
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 73A (Tc) 520W (Tc) Through Hole TO-247AC
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
21 Weeks
EDACAD-MODELL
STANDARDPAKET
25

Technische Daten

Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
73A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
39mOhm @ 36A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
362 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
7700 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
520W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AC
Package / Case
TO-247-3
Base Product Number
SIHG73

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

SIHG73N60E-GE3CT
SIHG73N60E-GE3CT-ND
SIHG73N60E-GE3TR
SIHG73N60EGE3
SIHG73N60E-GE3TR-ND
SIHG73N60E-GE3TRINACTIVE

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHG73N60E-GE3

Dokumente und Medien

Datasheets
1(SIHG73N60E)
Product Training Modules
1(High Voltage MOSFET E Series and PFC Device Selection)
PCN Assembly/Origin
1(Mosfet Mfg Add 28/Sep/2020)
PCN Packaging
1(Packing Tube Design 19/Sep/2019)

Menge Preis

QUANTITÄT: 1000
Einzelpreis: $7.71054
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 500
Einzelpreis: $8.40624
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 100
Einzelpreis: $9.2758
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 10
Einzelpreis: $10.725
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $12.17
Verpackung: Tube
MinMultiplikator: 1

Stellvertreter

-